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| 2N7002K N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN * * Gate Pretection Diode SOURCE 2 DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE Description: The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr nt and cost-e ectiveness device. The 2N7002K is universally used for all commercialindustrial applications. 3 1 2 Features: *Simple Drive Requirement *Small Package Outline SOT-23 Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3,V GS @10V(TA ,V GS @10V(TA Pulsed Drain Current 1, 2 Tota l Po wer Dis s ipation(T A =25C ) Maximum Junction-ambient 3 Unless Otherwise Specified) Symbol V DS VG S ID I DM PD R JA TJ Tstg ESD Value 60 20 640 500 950 1.38 90 +150 -55~+150 2500 Unit V mA W C/W C C V Operating Junction Temperature Range Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Device Marking 2N7002K = RK WEITRON http:www.weitron.com.tw 1/6 Rev.A 07-Aug-08 2N7002K Electrical Characteristics (TA = 25C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V G S =0, ID =250A Gate-Source Threshold Voltage V DS =V G S , ID =250A Gate-Source Leakage Current V G S = 20 V Drain-Source Leakage Current(Tj=25C) V DS =60V,VG S =0 Drain-Source Leakage Current(Tj=70C) V DS =48V,V G S =0 Drain-Source On-Resistance V G S =10V,I D =500mA V G S =4.5V,I D =200mA Forward Transconductance V DS =10V, I D =600mA g fs R DS(on) IDS S 100 V (BR)DSS V G S(Th) IG S S 60 1.0 V 3.0 10 1 A A - 600 2 4 - mS Dynamic Input Capacitance VGS=0V, VDS=25V, f=1.0MHz Output Capacitance VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1.0MHz Ciss Coss Crss 32 8 6 50 pF http:www.weitron.com.tw WEITRON 2/6 21-Nov-06 2N7002K Switching Turn-on Delay Time2 VDS=30V,VGS=10V,ID=600mA,RD=52,RG=3.3 Rise Time VDS=30V,VGS=10V,ID=600mA,RD=52,RG=3.3 Turn-off Delay Time VDS=30V,VGS=10V,ID=600mA,RD=52,RG=3.3 Fall Time VDS=30V,VGS=10V,ID=600mA,RD=52,RG=3.3 Total Gate Charge2 VDS=50V,VGS=4.5V,ID=600mA Gate-Source Charge VDS=50V,VGS=4.5V,ID=600mA Gate-Drain Change VDS=50V,VGS=4.5V,ID=600mA t d(on) 12 10 59 29 1 0.5 0.5 ns t d (off ) 1.6 nC tr tf Qg Q gs Q gd Source-Drain Diode Characteristics Forward On Voltage 2 VGS =0V, IS =200mA VSD - - 1.2 V Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad. http:www.weitron.com.tw WEITRON 3/6 21-Nov-06 2N7002K WEITRON http://www.weitron.com.tw 4/6 21-Nov-06 2N7002K WEITRON http://www.weitron.com.tw 5/6 21-Nov-06 2N7002K SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 6/6 21-Nov-06 |
Price & Availability of 2N7002K
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